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K4T51083QG Datasheet, Samsung

K4T51083QG sdram equivalent, 512mb g-die ddr2 sdram.

K4T51083QG Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 0.96MB)

K4T51083QG Datasheet
K4T51083QG Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 0.96MB)

K4T51083QG Datasheet

Features and benefits

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 2.

Application


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* DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control ABSOLUTE MAXIMUM RATINGS TA = 25°.

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View (1) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 100A TC = 125ºC Id = 100A GA.

Image gallery

K4T51083QG Page 1 K4T51083QG Page 2 K4T51083QG Page 3

TAGS

K4T51083QG
512Mb
G-die
DDR2
SDRAM
Samsung

Manufacturer


Samsung

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