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K4T51083QC

Manufacturer: Samsung Semiconductor

K4T51083QC datasheet by Samsung Semiconductor.

K4T51083QC datasheet preview

K4T51083QC Datasheet Details

Part number K4T51083QC
Datasheet K4T51083QC_Samsung.pdf
File Size 630.58 KB
Manufacturer Samsung Semiconductor
Description 512Mb C-die DDR2 SDRAM
K4T51083QC page 2 K4T51083QC page 3

K4T51083QC Overview

AC & DC Operating Conditions & Specifications Page 2 of 29 Rev. 1.2 May 2005 512Mb C-die DDR2 SDRAM 0. Ordering Information Org.

K4T51083QC Key Features

  • JEDEC standard 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 4 independent internal banks
  • Posted CAS
  • Programmable CAS Latency: 3, 4, 5
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/nibble sequential)
  • Programmable Sequential / Interleave Burst Mode
  • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)

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