Datasheet4U Logo Datasheet4U.com

K4T51043Q - 512Mb B-die DDR2 SDRAM

Description

3.

4.

Rev.

Features

  • Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
  • 4 Banks.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
  • Write Latency(WL) = Read Latency(RL) -1.
  • Burst Length: 4 , 8(Interleave.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K4T51043QB-GCD5 512Mb B-die DDR2 SDRAM Samsung semiconductor
K4T51043QB-ZCD5 512Mb B-die DDR2 SDRAM Samsung semiconductor
K4T51043QE 512Mb E-die DDR2 SDRAM Specification Samsung semiconductor
K4T51083QB-GCD5 512Mb B-die DDR2 SDRAM Samsung semiconductor
K4T51083QB-ZCD5 512Mb B-die DDR2 SDRAM Samsung semiconductor

Other Datasheets by Samsung Semiconductor

Part Number Description
K4T51043QG 512Mb G-die DDR2 SDRAM
K4T51043QI 512Mb I-die DDR2 SDRAM
K4T51043QJ 512Mb J-die DDR2 SDRAM
K4T51083QC 512Mb C-die DDR2 SDRAM
K4T51083QG 512Mb G-die DDR2 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.4 February 2005 Page 1 of 29 Rev. 1.4 Feb. 2005 512Mb B-die DDR2 SDRAM Contents DDR2 SDRAM 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Package Pintout & Mechnical Dimension 2.2 Input/Output Function Description 2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 29 Rev. 1.4 Feb. 2005 512Mb B-die DDR2 SDRAM 0.