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K4N56163QF-GC Datasheet, Samsung

K4N56163QF-GC sdram equivalent, 256mbit gddr2 sdram.

K4N56163QF-GC Avg. rating / M : 1.0 rating-11

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K4N56163QF-GC Datasheet

Features and benefits


* 1.8V + 0.1V power supply for device operation
* 1.8V + 0.1V power supply for I/O interface
* 4 Banks operation
* Posted CAS
* Programmable CAS Leten.

Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications. .

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TAGS

K4N56163QF-GC
256Mbit
gDDR2
SDRAM
K4N56163QG
K4N51163QC
K4N51163QC-ZC
Samsung

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