K4N51163QZ sdram equivalent, 512mbit gddr2 sdram.
* 1.8V + 0.1V power supply for device operation
* 1.8V + 0.1V power supply for I/O interface
* 4 Banks operation
* Posted CAS
* Programmable CAS Leten.
where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.
FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed
graphic double-data-rate transfer rates of up to 500MHz for general applications. The chip.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 1.37MB)