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K4N51163QC-ZC Datasheet, Samsung

K4N51163QC-ZC sdram equivalent, 512mbit gddr2 sdram.

K4N51163QC-ZC Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.44MB)

K4N51163QC-ZC Datasheet
K4N51163QC-ZC Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.44MB)

K4N51163QC-ZC Datasheet

Features and benefits


* 1.8V + 0.1V power supply for device operation
* 1.8V + 0.1V power supply for I/O interface
* 4 Banks operation
* Posted CAS
* Programmable CAS Leten.

Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications. T.

Image gallery

K4N51163QC-ZC Page 1 K4N51163QC-ZC Page 2 K4N51163QC-ZC Page 3

TAGS

K4N51163QC-ZC
512Mbit
gDDR2
SDRAM
Samsung

Manufacturer


Samsung

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