Datasheet4U Logo Datasheet4U.com

STS8202 - Dual N-Channel MOSFET

Datasheet Summary

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2.

📥 Download Datasheet

Datasheet preview – STS8202

Datasheet Details

Part number STS8202
Manufacturer SamHop Microelectronics
File Size 109.52 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet STS8202 Datasheet
Additional preview pages of the STS8202 datasheet.

📁 Similar Datasheet

  • STS8212 - Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop)
  • STS8213 - Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop)
  • STS8217 - Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop)
  • STS8235 - Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop)
  • STS8050 - NPN Silicon Transistor (AUK)
  • STS8550 - PNP Silicon Transistor (AUK)
  • STS8816 - Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop)
  • STS8C5H30L - Power MOSFET (ST Microelectronics)
  • STS8DN3LLH5 - Power MOSFETs (STMicroelectronics)
  • STS8DN6LF6AG - Automotive-grade dual N-channel Power MOSFET (STMicroelectronics)
Other Datasheets by SamHop Microelectronics
  • STS8201 - Dual N-Channel E nhancement Mode Field Effect Transistor
  • STS8205 - Dual N-Channel E nhancement Mode Field Effect Transistor
  • STS8207 - Dual N-Channel MOSFET
  • STS8208 - Dual N-Channel E nhancement Mode Field Effect Transistor
  • STS8215 - Dual N-Channel MOSFET
  • STS8216 - Dual N-Channel MOSFET
  • STS126 - N-Channel MOSFET
  • STS2300 - N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
Green Product STS8202 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 27 @ VGS=4.5V 28 @ VGS=4.0V 20V 5A 30 @ VGS=3.7V 33 @ VGS=3.1V 38 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 5.0 4.0 20 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.
Published: |