STS8202
STS8202 is Dual N-Channel MOSFET manufactured by SamHop Microelectronics.
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
TSOT 26 Top View
D1
D2
S1 D1/D2 S2
1 2 3
6 5 4
G1 D1/D2 G2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a
Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 5.0 4.0 20 a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.8 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a
°C/W
Details are subject to change without notice.
Jun,18,2014
.samhop..tw
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th)
VGS=0V , ID=250u A VDS=16V , VGS=0V
20 1 ±10
V u A u A
VGS= ±12V , VDS=0V
RDS(ON)
Drain-Source On-State Resistance
VDS=VGS , ID=1m A VGS=4.5V , ID=2.5A VGS=4.0V , ID=2.5A VGS=3.7V , ID=2.5A VGS=3.1V , ID=2.5A VGS=2.5V , ID=2.5A VDS=5V , ID=2.5A
0.5 18.5 19.0 19.5 20.0 21.0
0.8 22.0 23.0 25.0 27.0 29.0 15 240 120 57
V 27.0 m ohm 28.0 m ohm 30.0 m ohm 33.0 m ohm 38.0 m ohm S p F p F p F
1.5 g...
