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Green Product
STS6601
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-60V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package.
ID
-3.2A
R DS(ON) (m Ω) Max
110 @ VGS=-10V 160 @ VGS=-4.5V
S OT26 Top View
D
D D G
1 2 3
6 5 4
D D S
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit -60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -3.2 -2.6 -12
a
Units V V A A A W W °C
Maximum Power Dissipation
2 1.28 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
62.
STS6601 Datasheet
