SPP2329 mosfet equivalent, p-channel mosfet.
* -150V/-1.0A, RDS(ON)=900mΩ@VGS=-10V
* -150V/-1.0A, RDS(ON)=1000mΩ@VGS=-4.5V
* High density cell design for extremely low
RDS (ON)
* Exceptional on-resis.
* Powered System
* DC/DC Converter
* Load Switch
FEATURES
* -150V/-1.0A, RDS(ON)=900mΩ@VGS=-10V
* -.
The SPP2329 is the P-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPP2329 has been designed specifically to improve the overall efficiency of DC/DC converters.
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