SPP2301W mosfet equivalent, p-channel mosfet.
* -20V/-2.4A,RDS(ON)=128mΩ@VGS=-4.5V
* -20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-res.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPP2301W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.
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