SPP2327 mosfet equivalent, p-channel mosfet.
* -100V/-0.6A,RDS(ON)=650mΩ@VGS=-10V
* -100V/-0.4A,RDS(ON)=760mΩ@VGS=-4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-re.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPP2327 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
Image gallery
TAGS
Download (Size : 499.58KB)