SPP2311 datasheet, mosfet equivalent, SYNC POWER

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 344.51KB)

Features and benefits

* P-Channel -30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.25A,RDS(ON)=1.5Ω@VGS=-1.8V -30V/0.25A,RDS(ON)=3.0Ω@VGS=-1.5V
* Super high.

Application

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

Description

The SPP2311 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switchin.

Image gallery