SPN8852 mosfet equivalent, n-channel mosfet.
* 150V/4.1A,RDS(ON)=88mΩ@VGS=10V
* 150V/2A,RDS(ON)=100mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS(ON)
* Exceptional on-resistance a.
* DC/DC Converter
* Load Switch
* Synchronous Buck Converter
* SMPS Secondary Side Synchronous Rectifier.
The SPN8852 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
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