SPN8854 - N-Channel MOSFET

Description

The SPN8854 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

150V/68A, RDS(ON)=17 mΩ@VGS=10V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability PIN.

SYNC POWER

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Datasheet Details

Part number	SPN8854
Manufacturer	SYNC POWER
File Size	337.00 KB
Description	N-Channel MOSFET
Datasheet	SPN8854 Datasheet
Additional preview pages of the SPN8854 datasheet.

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Full PDF Text Transcription

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SPN8854 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8854 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8854 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Published: Sep 28, 2023 |