SPN6562 datasheet, mosfet equivalent, SYNC POWER

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Features and benefits

* N-Channel 30V/2.8A,RDS(ON)=65mΩ@VGS=10V 30V/2.3A,RDS(ON)=75mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=105mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS (O.

Application

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

Description

The SPN6562 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior swi.

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