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SPN65T10 - N-Channel MOSFET

Description

The SPN65T10 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 100V/68A, RDS(ON)=14mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/TO-263-2L/TO-252-2L package design PIN.

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Datasheet preview – SPN65T10

Datasheet Details

Part number SPN65T10
Manufacturer SYNC POWER
File Size 469.64 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN65T10 Datasheet
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SPN65T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN65T10 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
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