SPN4920A datasheet, mosfet equivalent, SYNC POWER

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Features and benefits

30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V 30V/5.8A,RDS(ON)= 45mΩ@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum D.

Application

z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LC.

Description

The SPN4920A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.

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