SPN4900 mosfet equivalent, n-channel mosfet.
* 60V/5.3A,RDS(ON)=118mΩ@VGS=10V
* 60V/4.7A,RDS(ON)=125mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPN4900 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are.
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