SPN4906 mosfet equivalent, n-channel mosfet.
* N-Channel
40V/6.0A,RDS(ON)=45mΩ@VGS=10V 40V/5.0A,RDS(ON)=54mΩ@VGS=4.5V 40V/4.5A,RDS(ON)=83mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS (ON.
such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.
The SPN4906 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior swi.
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