* 40V/3.9A,RDS(ON)=56mΩ@VGS=10V
* 40V/3.5A,RDS(ON)=62mΩ@VGS=4.5V
* 40V/2.0A,RDS(ON)=95mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(O.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

The SPN2318W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.

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