SPN125T10 mosfet equivalent, n-channel mosfet.
* 100V/112A, RDS(ON)=4.2mΩ@VGS=10V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance and maximum DC current
capability <.
* DC/DC Converter
* Load Switch
* SMPS Secondary Side Synchronous Rectifier
* Motor Control
* Power .
The SPN125T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .
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