Datasheet4U Logo Datasheet4U.com

STWA65N65DM2AG - Automotive-grade N-channel 650V 60A Power MOSFET

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

Features

  • Order code STWA65N65DM2AG VDS 650 V RDS(on) max. 50 mΩ ID 60 A TO-247 long leads D(2, TAB) G(1) S(3).
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

  • STWA45N65M5 - N-Channel MOSFET (INCHANGE)
  • STWA57N65M5 - N-Channel MOSFET (INCHANGE)
  • STW-195 - Retaining Ring Spec Sheet (AmericanRing)
  • STW10NA50 - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR (ST Microelectronics)
  • STW10NB60 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STW10NC60 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STW10NC70Z - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STW10NK60Z - N-channel Power MOSFET (ST Microelectronics)
  • STW10NK80Z - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STW11NB80 - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STWA65N65DM2AG Datasheet Automotive-grade N-channel 650 V, 42 mΩ typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Features Order code STWA65N65DM2AG VDS 650 V RDS(on) max. 50 mΩ ID 60 A TO-247 long leads D(2, TAB) G(1) S(3) • AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications AM01476v1_tab • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.
Published: |