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STWA65N60DM6 - N-channel Power MOSFET

This page provides the datasheet information for the STWA65N60DM6, a member of the STW65N60DM6 N-channel Power MOSFET family.

Description

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.

Features

  • Order code VDS RDS(on) max. ID STW65N60DM6 STWA65N60DM6 600 V 71 mΩ 46 A.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Datasheet preview – STWA65N60DM6

Datasheet Details

Part number STWA65N60DM6
Manufacturer STMicroelectronics
File Size 331.92 KB
Description N-channel Power MOSFET
Datasheet download datasheet STWA65N60DM6 Datasheet
Additional preview pages of the STWA65N60DM6 datasheet.

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Full PDF Text Transcription

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STW65N60DM6, STWA65N60DM6 Datasheet N-channel 600 V, 60 mΩ typ., 46 A MDmesh DM6 Power MOSFETs in a TO‑247 and TO‑247 long leads packages 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STW65N60DM6 STWA65N60DM6 600 V 71 mΩ 46 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.
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