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STWA67N60DM6 - N-channel Power MOSFET

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Features

  • Order code VDS RDS(on) max. ID STWA67N60DM6 600 V 54 mΩ 58 A.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Datasheet preview – STWA67N60DM6

Datasheet Details

Part number STWA67N60DM6
Manufacturer STMicroelectronics
File Size 269.93 KB
Description N-channel Power MOSFET
Datasheet download datasheet STWA67N60DM6 Datasheet
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STWA67N60DM6 Datasheet N-channel 600 V, 45 mΩ typ., 58 A MDmesh DM6 Power MOSFET in a TO‑247 long leads package TO-247 long leads D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STWA67N60DM6 600 V 54 mΩ 58 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.
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