STW26NM60-H mosfets equivalent, power mosfets.
Type STW26NM60N-H
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VDSS 600 V
RDS(on) max < 0.165 Ω
ID 20 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-.
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET ass.
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefor.
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