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STU85N3LH5 - N-channel Power MOSFET

General Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology.

Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Key Features

  • Type STD85N3LH5 STP85N3LH5 STU85N3LH5 VDSS RDS(on) max. ID 30 V < 0.005 Ω 80 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.

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STD85N3LH5 STP85N3LH5, STU85N3LH5 N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET Features Type STD85N3LH5 STP85N3LH5 STU85N3LH5 VDSS RDS(on) max. ID 30 V < 0.005 Ω 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. 3 1 DPAK IPAK 3 2 1 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1.