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STU5N65M6 - N-channel Power MOSFET

General Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

area improvement with o

Key Features

  • Order code VDS RDS(on) max. ID TAB STU5N65M6 650 V 1.3 Ω 4A IPAK 3 2 1 Figure 1: Internal schematic diagram.
  • Reduced switching losses.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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STU5N65M6 N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in an IPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID TAB STU5N65M6 650 V 1.3 Ω 4A IPAK 3 2 1 Figure 1: Internal schematic diagram  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100% avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.