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STU5N95K5 - N-channel Power MOSFET

Description

t(s) AM01476v1_tab K5 technology based on an innovative proprietary vertical structure.

Features

  • TAB Order code VDS RDS(on) max. ID 3 ) 2 t(s 1 c IPAK te Produ D(2, TAB) STU5N95K5 950 V.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STU5N95K5

Datasheet Details

Part number STU5N95K5
Manufacturer STMicroelectronics
File Size 383.84 KB
Description N-channel Power MOSFET
Datasheet download datasheet STU5N95K5 Datasheet
Additional preview pages of the STU5N95K5 datasheet.

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Full PDF Text Transcription

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STU5N95K5 Datasheet N-channel 950 V, 2.0 Ω typ., 3.5 A MDmesh K5 Power MOSFET in an IPAK package Features TAB Order code VDS RDS(on) max. ID 3 ) 2 t(s 1 c IPAK te Produ D(2, TAB) STU5N95K5 950 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications 2.5 Ω 3.5 A le G(1) • Switching applications bso Description - O S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh t(s) AM01476v1_tab K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications crequiring superior power density and high efficiency.
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