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STU5N95K3 - N-Channel Power MOSFET

Description

structure.

Features

  • TAB Order code VDS RDS(on) max. ID STU5N95K3 950 V 3.5 Ω 4A 3 2 1.
  • 100% avalanche tested.
  • Extremely high dv/dt capability IPAK.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics D(2, TAB).
  • Zener-protected.

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Datasheet preview – STU5N95K3

Datasheet Details

Part number STU5N95K3
Manufacturer STMicroelectronics
File Size 376.77 KB
Description N-Channel Power MOSFET
Datasheet download datasheet STU5N95K3 Datasheet
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Full PDF Text Transcription

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STU5N95K3 Datasheet N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in an IPAK package Features TAB Order code VDS RDS(on) max. ID STU5N95K3 950 V 3.5 Ω 4A 3 2 1 • 100% avalanche tested • Extremely high dv/dt capability IPAK • Very low intrinsic capacitance • Improved diode reverse recovery characteristics D(2, TAB) • Zener-protected Applications G(1) • Switching applications Description S(3) This MDmesh K3 Power MOSFET is the result of improvements applied to AM01476v1_tab STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
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