TAB 3 2 1 TO-220 Order code VDS RDS(on) max ID STP180NS04ZC 40 V clamped 4.2 mΩ 120 A
* Low capacitance and gate charge
* 100% avalanche tested
* 175 °C.

* Switching and linear applications Figure 1. Internal schematic diagram D(2,TAB) G(1) Description This fully clam.

This fully clamped Power MOSFET is manufactured using an advanced mesh overlay process which is based on an innovative strip layout. The benefits of this technology, coupled with the extra clamping capabilities render this device particularly suitabl.

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