STP180N10F3 mosfet equivalent, n-channel power mosfet.
Order codes
VDSS
STP180N10F3 100 V
* Ultra low on-resistance
* 100% avalanche tested
RDS(on) max.
5.1 mΩ
ID 120 A
Applications
* High current switching.
* High current switching applications
Description
This device is an N-channel enhancement mode Power MOSFET produce.
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.
TAB
3 2 1
TO-22.
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