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STP18N55M5 - N-channel Power MOSFET

Description

layout.

Features

  • TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP18N55M5 600 V 192 mΩ 16 A.
  • Extremely low RDS(on).
  • Low gate charge and input capacitance.
  • Excellent switching performance.
  • 100% avalanche tested.

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STP18N55M5 Datasheet N-channel 550 V, 150 mΩ typ., 16 A MDmesh M5 Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP18N55M5 600 V 192 mΩ 16 A • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative S(3) vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly AM01475v1_noZen suitable for applications requiring high power and superior efficiency.
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