TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP18N55M5 600 V 192 mΩ 16 A
* Extremely low RDS(on)
* Low gate charge and inpu.

* Switching applications G(1) Description This device is an N-channel Power MOSFET based on the MDmesh M5 innova.

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative S(3) vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly.

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