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STP17N62K3 - N-channel Power MOSFET

Description

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Features

  • Order codes VDSS STF17N62K3 STP17N62K3 STW17N62K3 620 V 620 V 620 V RDS(on) max. ID Pw < 0.34 Ω < 0.34 Ω < 0.34 Ω 15.5 A 40 W 15.5 A 190 W 15.5 A 190 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Datasheet Details

Part number STP17N62K3
Manufacturer STMicroelectronics
File Size 939.28 KB
Description N-channel Power MOSFET
Datasheet download datasheet STP17N62K3 Datasheet
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Full PDF Text Transcription

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STF17N62K3 STP17N62K3, STW17N62K3 N-channel 620 V, 0.28 Ω, 15.5 A, TO-220FP, TO-220, TO-247 SuperMESH3™ Power MOSFET Features Order codes VDSS STF17N62K3 STP17N62K3 STW17N62K3 620 V 620 V 620 V RDS(on) max. ID Pw < 0.34 Ω < 0.34 Ω < 0.34 Ω 15.5 A 40 W 15.5 A 190 W 15.5 A 190 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications Description This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
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