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STP170N8F7 - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Table 1.

Features

  • TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% .
  •  Order code VDS RDS(on) max. ID PTOT STP170N8F7 80 V 0.0039 Ω 120 A 250 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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STP170N8F7 N-channel 80 V, 0.003 Ω typ., 120 A, STripFET™ F7 Power MOSFET in TO-220 package Datasheet — production data Features TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% *  Order code VDS RDS(on) max. ID PTOT STP170N8F7 80 V 0.0039 Ω 120 A 250 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6  $0Y Order code STP170N8F7 Table 1.
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