Order code VDS STN6N60M2 600 V
* Extremely low gate charge
* Excellent output capacitance (Coss) profile
* 100% avalanche tested
* Zener-protected R.

* Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 te.

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it S(2) NG1D3S.

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