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STN6N60M2 - N-Channel MOSFET

Description

technology.

Features

  • Order code VDS STN6N60M2 600 V.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max. 1.25 Ω ID 5.5 A D(3).

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Full PDF Text Transcription

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STN6N60M2 N-channel 600 V, 1.00 Ω typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package 3 2 1 SOT223-2 Features Order code VDS STN6N60M2 600 V • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected RDS(on) max. 1.25 Ω ID 5.5 A D(3) Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it S(2) NG1D3S2_SOT223 suitable for the most demanding high efficiency converters.
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