Click to expand full text
STN690A
High performance low voltage NPN transistor
Features
■ Very low collector to emitter saturation voltage
■ DC current gain, hFE > 100 ■ 3 A continuous collector current
t(s)■ 40 V breakdown voltage V(BR)CER
■ SOT-223 plastic package for surface mounting
uccircuits in tape and reel packaging rodApplications te P■ Power management in portable equipment le■ Voltage regulation in bias supply circuits o■ Switching regulator in battery charger sapplications Ob■ Heavy load driver t(s) -Description cThe device in manufactured in low voltage NPN uplanar technology by using a “Base Island” layout. dThe resulting transistor shows exceptional high rogain performance coupled with very low Obsolete Psaturation voltage.
4 3
2 1
SOT-223
Figure 1. Internal schematic diagram
Table 1.