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STN1NC60 - N-CHANNEL MOSFET

Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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www.DataSheet4U.com N-CHANNEL 600V - 12Ω - 0.3A - SOT-223 PowerMesh™II MOSFET TYPE STN1NC60 s s s s s STN1NC60 VDSS 600 V RDS(on) <15Ω ID 0.3 A TYPICAL RDS(on) = 12Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 2 1 SOT-223 2 3 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
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