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STN1N20
N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET
Features
Type
VDSS RDS(on) max
ID
STN1N20
200 V
< 1.5 Ω
t(s)■ 100% avalanche tested
1A
ucApplication rod■ Switching applications
PDescription leteThis device is an N-channel Power MOSFET odeveloped using the latest high voltage MESH sOVERLAY™ process. The new patented STrip blayout coupled with the company’s proprietary Oedge termination structure, makes it suitable in ) -converters for lighting applications.
4 3
2 1 SOT-223
Figure 1. Internal schematic diagram
$
roduct(s ' Obsolete P 3
!-V
Table 1. Device summary Order code STN1N20
Marking N1N20
Package SOT-223
Packaging Tape and reel
June 2011
Doc ID 6772 Rev 3
1/12
www.st.
STN1N20 Datasheet
