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N-CHANNEL 600V - 7Ω - 0.4A - SOT-223 PowerMesh™II MOSFET
TYPE STN1HNC60
s s s s s
STN1HNC60
VDSS 600 V
RDS(on) <8Ω
ID 0.4 A
TYPICAL RDS(on) = 7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
2
1
SOT-223
2
3
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
STN1HNC60 Datasheet
