Order code VDS STL9P3LLH6 -30 V
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss RDS(on) max .

* Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 techn.

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. AM01475v4 Product status STL9P3LLH6 Product summary Order .

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