Type STL90N3LLH6 VDSS 30 V RDS(on) max 0.004 Ω ID 24 A (1) 1. The value is rated according Rthj-pcb
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* RDS(on) * Qg industry benchmark Extrem.

Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s pro.

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding D.

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