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STL9N60M2 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Key Features

  • Order code VDS @ TJmax RDS(on) max ID STL9N60M2 650 V 0.86 Ω 4.8 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL9N60M2 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data 1 2 3 4 PowerFLAT™ 5x6 HV Features Order code VDS @ TJmax RDS(on) max ID STL9N60M2 650 V 0.86 Ω 4.8 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.