STL9N60M2
STL9N60M2 is N-channel Power MOSFET manufactured by STMicroelectronics.
Features
Order code VDS @ TJmax RDS(on) max ID
650 V
0.86 Ω 4.8 A
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
S(1, 2, 3)
12 34
Top View
AM15540v3
Order code STL9N60M2
Table 1. Device summary
Marking
Package...
