STL9N60M2 mosfet equivalent, n-channel power mosfet.
Order code VDS @ TJmax RDS(on) max ID
STL9N60M2
650 V
0.86 Ω 4.8 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate i.
* Switching applications
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Description
This device.
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest .
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