Type STL24NM60N VDSS @ TJmax 650 V RDS(on) max < 0.215 Ω ID 16 A (1) ' $ 3 3 3 "OTTOMVIEW 1. The value is rated according to Rthj-case
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* Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET.

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.

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