Order code STL20N6F7 VDS 60 V RDS(on) max 0.0054 Ω ID 20 A
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss rati.

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2.

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