STL24N65M2 Datasheet, STMicroelectronics

Order codes STL24N65M2 VDS 650 V RDS(on) max 0.250 Ω ID 14 A
* Extremely low gate charge
* Excellent output capacitance (Coss) profile
* 100% avalanche te.

* Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology..

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering it suitable for the m.