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STL200N45LF7 - N-channel Power MOSFET

Datasheet Summary

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STL200N45LF7 VDS 45 V RDS(on) max. 1.8 mΩ ID 120 A.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Datasheet preview – STL200N45LF7

Datasheet Details

Part number STL200N45LF7
Manufacturer STMicroelectronics
File Size 756.52 KB
Description N-channel Power MOSFET
Datasheet download datasheet STL200N45LF7 Datasheet
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Full PDF Text Transcription

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STL200N45LF7 N-channel 45 V, 1.4 mΩ typ., 120 A STripFET ™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL200N45LF7 VDS 45 V RDS(on) max. 1.8 mΩ ID 120 A  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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