Datasheet4U Logo Datasheet4U.com

STL20NM20N - N-CHANNEL MOSFET

Datasheet Summary

Description

This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages.

Features

  • VDSS 200 V RDS(on) < 0.105 Ω ID 20 A Figure 1: Package TYPE STL20NM20N s s s s s s s s.

📥 Download Datasheet

Datasheet preview – STL20NM20N

Datasheet Details

Part number STL20NM20N
Manufacturer STMicroelectronics
File Size 352.97 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STL20NM20N Datasheet
Additional preview pages of the STL20NM20N datasheet.

📁 Similar Datasheet

  • STL23N85K5 - 18 A PowerFLAT 8x8 HV Zener-protected SuperMESH 5 Power MOSFET (ST Microelectronics)
  • STL23NM60ND - FDmesh II Power MOSFET(with fast diode) PowerFLAT (8x8) HV (ST Microelectronics)
  • STL2545N - TRENCH SCHOTTKY BARRIER DIODE (JILIN SINO)
  • STL25A45N - TRENCH SCHOTTKY BARRIER DIODE (JILIN SINO)
  • STL25N15F3 - Power MOSFETs (ST Microelectronics)
  • STL25N15F4 - Power MOSFETs (ST Microelectronics)
  • STL-S3 - Stratum 3 Timing Module (Connor-Winfield)
  • STL-S3E - Stratum 3E Timing Module (Connor-Winfield)
  • STL03S03F - (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter (Superworld Electronics)
  • STL03S05F - (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter (Superworld Electronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STL20NM20N N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT™ ULTRA LOW GATE CHARGE MDmesh™ II MOSFET www.datasheet4u.com Table 1: General Features VDSS 200 V RDS(on) < 0.105 Ω ID 20 A Figure 1: Package TYPE STL20NM20N s s s s s s s s WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.088Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE LOW GATE RESISTANCE LOW INPUT CAPACITANCE HIGH dv/dt and AVALANCHE CAPABILITIES PowerFlat (6x5) (Chip Scale Package) DESCRIPTION This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance.
Published: |