STL19N3LLH6AG datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS STL19N3LLH6AG 30 V
* AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate dri.

Application

* Switching applications S(1, 2, 3) 12 34 Top View NG4D5678S123 Description This device is an N-channel Power MOS.

Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL19N3LLH6AG Product summary Order co.

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