STL100N3LLH7 30v equivalent, power mosfets n-channel 30v.
Type STL100N3LLH7 VDSS 30 V RDS(on) max 0.0035 Ω ID 25 A (1)
1. The value is rated according Rthj-pcb
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RDS(on) * Qg industry benchmark Extremely low on.
Figure 1. Internal schematic diagram
Description
This device utilizes the 7th generation of design rules of ST’s propri.
This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Table 1.
Device summary
Marking 100N3LLH7 Package P.
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