Order code STL105DN4LF7AG VDS 40 V RDS(on) max. 4.5 mΩ ID 40 A
* AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of me.

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order .

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